22,000
The approximate number of living ECE ILLINOIS alumni worldwide.
Title | Rubric | Section | CRN | Type | Hours | Times | Days | Location | Instructor |
---|---|---|---|---|---|---|---|---|---|
Physcs & Modeling Semicond Dev | ECE441 | D | 33888 | LCD | 1000 - 1050 | M W F | 3081 ECE Building | Elyse Rosenbaum |
This course is designed to provide undergraduate students with a wide background and the ability to deal with advanced concepts in semiconductor electronic devices.
This course is designed to provide undergraduate students with a wide background and the ability to deal with advanced concepts in semiconductor electronic devices.
Topics:
Use of TCAD for device simulation as HW
HW every week
N/A
N/A
R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 3rd ed., Wiley, New York.
Engineering Science: 2 credits or 67%
Engineering Design 33%
This course is a technical elective for electrical engineering majors, and is recommended for students pursuing Graduate Study in Physical Electronics and Microelectronics. The course deals with advanced physical and technological concepts in Solid State Electronics Devices and prepares electrical engineering majors for taking follow-on courses in these areas.
A. By the time of the Mid Term Exam (after 20 lectures + review), the students should be able to do the following:
1. Explain advanced physical concepts in Semiconductor Electronics such as carrier and impurity statistics, and hot carriers transport effects. (1)
2. Set-up an electronic model for the charge distribution at a semiconductor interface as a function of the interface conditions. (1,6)
3. Apply Poisson equation to find the electronic properties of a semiconductor homojunction, a metal-semiconductor junction and a insulator-semiconductor junction with interface charge. (1)
4. Explain the concepts of graded impurity distribution and potential barrier, and related approximations such as the depletion and quasi-neutrality approximations. (1)
5. Explain the concept of Debye length (intrinsic and extrinsic) (1)
6. Explain the concept of abrupt and graded doping. (1)
7. Compute the doping profile of an asymmetric P-N junction given Capacitance -Voltage characteristics. (1)
8. Explain the concept of breakdown voltage in relation with Avalanche and Zener breakdown. (1)
9. Explain the difference between donors/acceptors, traps and recombination centers. (1)
10. Apply the Shockley-Hall-Read model to determine the recombination rate of carriers in semiconductors. (1,6)
11. Explain the advanced concepts of Auger recombination and Surface recombination. (1)
12. Determine the carrier lifetime with the mechanisms defined in 10 and 11 above. (1,6)
13. Estimate and discuss the importance of space-charge region currents in a P-N junction. (1,6)
B. By the time of the Final Exam (42 lectures + Midterm exam + review), the student should be able to do all of the items listed under A plus the following:
14. Explain in detail the principle of BJT action and the difference between a prototype transistor and real transistors for intergrated circuits. (1)
15. Compute the Gummel number of a BJT. (1)
16. Explain the Early effect and its consequence for the BJT performances. (1)
17. Explain the effects of low and high emitter biases for the BJT performances. (1)
18. Explain the Kirk effect in BJT’s. (1)
19. Estimate the effects of base resistance and its consequence for the BJT performances. (1)
20. Estimate the base transit time in a BJT as a function of the base graded doping. (1)
21. Use the charge-control model to determine the switching characteristics of a BJT. (1)
22. Explain the concept of deep-depletion and its influence on the C-V curve of a MOS system. (1)
23. Derive the different surface regimes from the C-V curve of a MOS system.(1,6)
24. Determine the different components of the oxide charge and their influence on the flat-band voltage and the threshold voltage. (1,6)
25. Explain the difference between the charge control model and the variable-depletion charge model for the I-V characteristics of a MOSFET. (1)
26. Estimate theoretically the transit time of a MOSFET before saturation. (1,6)
27. Extract the threshold voltage of a MOSFET from experimental data. (1,6)
28. Determine the design rule for the threshold voltage of a MOSFET. (1,2)
29. Estimate the magnitude of the subthreshold current in a MOSFET. (1)
30. Discuss the causes for the channel velocity modulation in a MOSFET. (1)
31. Discuss the effects of hot carriers, short and small channel MOSFET’s on the performances of the devices. (1,2)
32. Discuss the breakdown mechanisms in MOSFET’s. (1)
33. Explain the scaling laws for smaller size MOSFET’s. (1,2)
The approximate number of living ECE ILLINOIS alumni worldwide.
DEPARTMENT OF ELECTRICAL
AND COMPUTER ENGINEERING
Copyright ©2019 The Board of Trustees at the University of Illinois. All rights reserved
Privacy statements | Cookie Policy
CookieSettings