Can Bayram

Can Bayram

For more information

• Prof. Bayram's Research Group: Innovative COmpound semiconductoR LABoratory (ICORLAB)

Education

• Ph.D. in Electrical Engineering and Computer Science, Northwestern University, IL, USA, 2011

Biography

Prof. Bayram is an expert in III-V materials & photonic and electronic devices. He has personally performed more than 3,000+ epitaxial growths with metalorganic chemical vapor deposition systems and fabricated detectors, light emitting diodes, solar cells, resonant tunneling diodes, and transistors in class 100 and 1000 cleanrooms totaling 20,000+ hrs equipment usage. His current research interests lie in the intersection of novel III-V materials, hetero-structures, and photonic and electronic quantum devices. Particularly, his research group explores novel materials, devices, and their 3D hetero-integration on unconventional platforms such as graphene and silicon; investigates heat transport across/through semiconductors; efficiency droop mechanisms and remedies in AlInGaN emitters; and ultra-fast THz photonics/electronics.

SELECT RESEARCH IMPACT

• Impact of transitional metals on (In)GaN quantum wells. Appl. Phys. Lett. 116, 192106 (2020).
• Impact of dislocations on GaN thermal conductivity. J. Appl. Phys. 126, 185103 (2019).
• Cubic III-nitride semiconductor properties. Sci. Rep. 9, 6583 (2019). ACS Omega 5, 3917 (2020).
• Cubic GaN synthesis, i.e. invention of U-groove aspect ratio silicon patterning for phase-transition III-nitride material synthesis. Adv. Funct. Mater. 24 (28) 4492 (2014). Appl. Phys. Lett. 109, 042103 (2016). ACS Photonics 5 (3), 955 (2018).
• Passive cooling of GaN devices via thickness optimization. Appl. Phys. Lett. 109, 151904 (2016).
• GaN on graphene, i.e. first 3D compound semiconductor direct epitaxy integration on a 2D one. Nat. Comm. 5, 4836 (2014).
• Resonant tunneling in GaN RTDs, i.e. first reliable and reproducible negative differential resistance via defect reduction, elimination of polarization-fields, and reduction of Al-content. Appl. Phys. Lett. 96, 042103 ; 97, 092104 ; 97, 181109 (2010).
• Hybrid green LED, i.e. first ZnO atop InGaN-based high spectral quality green LEDs. Appl. Phys. Lett. 93, 081111 (2008).

Teaching Statement

Semiconductor fundamentals are essential in understanding everyday electronic and photonic devices. Undergraduate education should provide a solid foundation in semiconductors and should relate to everyday solid state devices. My goal as an instructor is to get students explain device behavior from the atomic scale up. I achieve this via first motivating the class for the big picture and then focusing on the atomic scale and describing atomic interactions leading to macroscopic effects observed in solid state devices. By building up the device behavior through atomic engineering, students understand the fundamentals governing everyday semiconductor devices such as light emitting diodes, solar cells, and transistors. It is notable that underlying physics, engineering, and science of solid state devices remain the same half a century; however, their applications, which I deem most important as an engineering faculty, diverse speedily. I see my role as a faculty not only to teach the fundamentals to the students but also making them aware of many out-there opportunities in the world. In the midst of fast-paced technology, one way to enable this is updating teaching tools and course materials. My instruction is geared towards enabling students become aware that microelectronics and photonics field is beyond the conventional solid state device applications and exciting them into the emerging interdisciplinary areas. I firmly believe teaching and research go hand-in-hand. I bring real-life problems to the classroom. Students need to leave their comfort zone, forego the classical classroom mentality, and look at tomorrow's needs via extending their knowledge, skills, and self. I bring fundamental knowledge, updated tools, and targeted means to the classroom for them do so.

Other Undergraduate Advising Activities

• "Application of Controlled Spalling to Thin-film Lithium Niobate Transducers" (Senior Thesis, Dec. 2018, Dennis Rich).
• "Thin-film GaN HEMTs For Flexible Electronics" (Senior Thesis, May 2017, Joshua Perozek)
• "Simulation of Zinc-blende Gallium Nitride High Electron Mobility Transistors For Normally-off Operation" (Senior Thesis, May 2017, Ryan Grady).
• "Optimization of Off-State Breakdown Voltage in GaN High Electron Mobility Transistors" (Senior Thesis, May 2016, Begum Kasap).
• "Normally-off GaN Transistors" (Senior Thesis, May 2016, Philip Tsai).

Research Statement

Our current research interests lie in the intersection of novel III-V materials and hetero-structures & photonic and electronic quantum devices. Particularly, we explore novel materials, devices, and their 3D hetero-integration on unconventional platforms such as graphene and silicon, heat transport across/through semiconductors, efficiency droop mechanisms and remedies in AlInGaN emitters, and ultra-fast THz photonics/electronics. Our work is interdisciplinary. Our team demonstrates strong skills in solid state physics, first principles calculations, Technology Computer Aided Design, micro/nano-fabrication, and reliability characterization and analysis of semiconductor devices.

Post-Doctoral Research Opportunities

Our group might have an opening for a postdoctoral researcher who has HANDS-ON experience in the micro/nano-FABRICATION of compound semiconductor devices (including light emitting diodes and transistors based on GALLIUM NITRIDE devices) in a cleanroom environment. Postdoctoral candidates are encouraged to contact Prof. Can Bayram directly via email (and should attach their CV and the contact information for at least two references) to inquire about any position/project openings.

Graduate Research Opportunities

Our group is inviting undergraduate and graduate students to apply for PhD thesis openings in the areas of (a) Novel III-V materials and hetero-structures, and (b) Photonic and electronic quantum devices. Our graduate students are recognized internally (as ECE 443 Best Project Awardees, College of Engineering Yunni & Maxine Pao Memorial Fellows, ECE Gregory Stillman Semiconductor Research Awardees, ECE Ernest A. Reid Fellows, ECE Nick and Katherine Holonyak, Jr. Outstanding Research Awardees, Graduate College Travel Grantees for Dissertation Research), nationally (as NSF Graduate Research Fellows, NASA Space Technology Research Fellows, National Inventors Hall of Fame Collegiate Inventors Competition Finalist, Lemelson-MIT Student Prize Graduate Finalist) and internationally (as SPIE Scholars, Conference Best Paper Awardees, Conference Travel Grantees, Siegman International School on Lasers Invitees). Incoming and/or interested graduates are encouraged to browse our group webpage and contact Prof. Can Bayram directly via email (and should attach their CV and unofficial UG/GRAD transcripts) to inquire about any position/project openings.

Undergraduate Research Opportunities

Our group is inviting highly motivated undergraduates, currently enrolled at our University of Illinois at Urbana-Champaign, to join our research team. Particularly, students who wish to have experience in semiconductor devices and who are passionate about creating next generation photonic and micro/nano-electronic devices are welcomed. Historically, students who joined our research team as early as in their freshman/sophomore years are recognized internally (as College of Engineering Scholars, Honors Program Summer Research Grantees, ECE Bardeen Undergraduate Research Awardees, ECE Robert C. MacClinchie Scholars, ECE Michael E. Napier Memorial Awardees. MATSCI Alfred W. Allen Awardees, MATSCI Earl J. Eckel Scholars, ECE Distinguished Research Fellows, Churchill Scholarship Nominees) and externally (as Goldwater Scholars, NSF Graduate Research Fellows, NSF REU Awardees, SPIE Scholars, IEEE Women in Photonics Travel Grantees, DaRin Butz Foundation Research Scholars, Greater Austin Illini Club Scholars). Please contact Prof. Can Bayram directly via email (and attach your CV and unofficial transcript showing your courses) to inquire about our any position/project openings.

Research Interests

• Efficiency droop mechanisms and remedies in AlInGaN emitters
• Ultra-fast THz photonics/electronics
• Heat transport across/through semiconductors
• Novel materials, devices, and their 3D hetero-integration on unconventional platforms such as graphene and silicon

Research Topics

• Beyond CMOS
• Charge particle physics and engineering
• Electronics, Plasmonics, and Photonics
• Energy
• Micro & nanoelectromechanical M/NEMS integrated systems
• Photonics: optical engineering and systems
• Quantum optics, cryptography, information, and computing
• RF and microwave engineering
• Semiconductor devices and manufacturing
• Solar and renewable technology

Selected Articles in Journals

• J. Meyer, R. Liu, R.D. Schaller, H-P Lee, and C. Bayram, Systematic Study of Shockley-Read-Hall and Radiative Recombination in GaN on Al2O3, Freestanding GaN, and GaN on Si, J. Phys. Photonics 2, 035003 (2020).
• R. Liu, E. Z. Tucker, S. M. Lee, K. Kasarla, C. McCormick, and C. Bayram, Cp2Mg-Induced Transition Metal Ion Contamination and Performance Loss in MOCVD-Grown Blue Emitting InGaN/GaN Multiple Quantum Wells, Appl. Phys. Lett. 116, 192106 (2020).
• A. Mohamed, K. Park, C. Bayram, M. Dutta, and M. Stroscio, Phonon-assisted reduction of hot spot temperature in AlInN ternaries, J. Phys. D-Appl. Phys. 53, 365102 (2020).
• H-P. Lee and C. Bayram, Improving Current on/off Ratio and Subthreshold Swing of Schottky-gate AlGaN/GaN HEMTs By Post-metallization Annealing, IEEE Trans. Electron Devices 67 (7), 2760 (2020).
• Y.-C. Tsai and C. Bayram, Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density-Functional Theory, ACS Omega 5, 3917 - 3923 (2020).
• K. Park and C. Bayram, Impact of dislocations on the thermal conductivity of gallium nitride studied by time-domain thermoreflectance, J. Appl. Phys. 126, 185103 (2019).
• H-P. Lee and C. Bayram, Investigation of annealed, thin(~ 2.6 nm)-Al2O3/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies, Mater. Res. Express 6, 105904 (2019).
• Y.-C. Tsai and C. Bayram, Structural and Electronic Properties of Hexagonal and Cubic Phase AlGaInN Alloys Investigated Using First Principles Calculations, Sci. Rep. 9:6583 (2019).
• A. Mohamed, K. Park, C. Bayram, M. Dutta, and M. Stroscio, Confined and Interface Optical Phonon Emission in GaN/InGaN Double Barrier Quantum Well Heterostructures, PLoS One 14(4): e0214971 (2019).
• R. Liu, C. McCormick, and C. Bayram, Comparison of Structural and Optical Properties of Blue Emitting In0.15Ga0.85N/GaN Multi-Quantum-Well Layers Grown on Sapphire and Silicon Substrates, AIP Advances 9, 025306 (2019).
• K. Park, A. Mohamed, M. Dutta, M. Stroscio, and C. Bayram, Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure, Sci. Rep. 8:15947 (2018).
• R. Liu, R. Schaller, C.-Q. Chen, and C. Bayram, High internal quantum efficiency ultraviolet emission from phase-transition cubic GaN integrated on nanopatterned Si(100), ACS Photonics 5 (3), 955 - 963 (2018).
• K.-T. Lee, C. Bayram, D. Piedra, E. Sprogis, H. Deligianni, B. Krishnan, G. Papasouliotis, A. Paranjpe, E. Aklimi, K. Shepard, W. J. Gallagher, T. Palacios, and D. K. Sadana, Heterogeneous Integration of GaN Devices on a 200 mm Si(100) Wafer via Scalable CMOS Technology, IEEE Electron Device Lett. 38 (8), 1094 - 1096 (2017).
• K. Park, M. A. Stroscio, and C. Bayram, Investigation of electron mobility and saturation velocity limits in gallium nitride using uniaxial dielectric continuum model, Journal of Applied Physics 121, 245109 (2017).
• R. Grady and C. Bayram, Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation, J. Phys. D: Appl. Phys. 50, 265104 (2017).
• J. Perozek, H.-P. Lee, B. Krishnan, G. Papasouliotis, A. Paranjpe, K. B. Reuter, D. K. Sadana, and C. Bayram, Investigation of Structural, Optical, and Electrical Characteristics of an AlGaN/GaN High Electron Mobility Transistor Structure across a 200 mm Si (111) Substrate, J. Phys. D-Appl. Phys. 50, 055103 (2017).
• H-P Lee, J. Perozek, L. N. D. Rosario, and C. Bayram, Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations, Nature Scientific Reports 6: 37588 (2016).
• K. Park and C. Bayram, Thermal Resistance Optimization of GaN / Substrate Stacks Considering Thermal Boundary Resistance and Temperature-dependent Thermal Conductivity, Appl. Phys. Lett. 109, 151904 (2016).
• R. Liu and C. Bayram, Maximizing Cubic Phase Gallium Nitride Surface Coverage on Nano-patterned Silicon (100), Appl. Phys. Lett. 109, 042103 (2016).
• R. Liu and C. Bayram, Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100), J. Appl. Phys. 120, 025106 (2016).
• J. Kim* & C. Bayram* (* equal contribution), H. Park, C.-W. Cheng, C. Dimitrakopoulos, J. A. Ott, K. B. Reuter, S. W. Bedell, and D.K. Sadana, Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene, Nat. Commun. 5: 4836 (2014).
• C. Bayram, J. Ott, K.-T. Shiu, C.-W. Cheng, Y. Zhu, J. Kim, M. Razeghi, and D.K. Sadana, Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy, Adv. Funct. Mater. 24 (28), 4492 (2014).
• S. W. Bedell, C. Bayram, K. Fogel, P. Lauro, J. Kiser, J. Ott, Y. Zhu, and D. Sadana, Vertical Light-Emitting Diode Fabrication by Controlled Spalling, Applied Physics Express 6 (11), 112301 (2013).
• D. Shahrjerdi, S. W. Bedell, C. Bayram, C. C. Lubguban, K. Fogel, P. Lauro, J.A. Ott, M. Hopstaken, M. Gayeness, and D. Sadana, Ultra-Light High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic, Advanced Energy Materials 3 (5), 566 - 571 (2013).
• Y. Zhang, S. Gautier, C.-Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, C.Bayram, Y. Bai, and M. Razeghi, Near Miliwatt Power AlGaN-based Ultraviolet Light Emitting Diodes based on Lateral Epitaxial Overgrowth of AlN on Si(111), Applied Physics Letters 102, 011106 (2013).
• D. Shahrjerdi, S. W. Bedell, C. Ebert, C. Bayram, B. Hekmatshoar, K. Fogel, P. Lauro, M. Gaynes, T. Gokmen, J. Ott, and D. K. Sadana, High-Efficiency Thin- Film InGaP/InGaAs/Ge Tandem Solar Cells Enabled By Controlled Spalling Technology, Applied Physics Letters 100, 053901 (2012).
• C. Bayram, High quality AlGaN/GaN superlattices for near- and mid-infrared intersubband transitions, Journal of Applied Physics 111, 013514 (2012).
• C. Bayram, Z. Vashaei, and M. Razeghi, Reliability in room-temperature negative differential resistance characteristics of low-aluminium-content AlGaN/GaN double-barrier resonant tunneling diodes, Applied Physics Letters 97, 181109 (2010).
• Z. Vashaei, C. Bayram, P. Lavenus, and M. Razeghi. Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices, Applied Physics Letters 97, 121918 (2010).
• C. Bayram, Z. Vashaei, and M. Razeghi, Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes, Applied Physics Letters 97, 092104 (2010).
• E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, and M. Razeghi, Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free- standing GaN substrates, Applied Physics Letters 96, 261107 (2010).
• Z. Vashaei, E. Cicek, C. Bayram, R. McClintock, and M. Razeghi, GaN avalanche photodiodes grown on m-plane freestanding GaN substrate, Applied Physics Letters 96, 201908 (2010).
• Z. Vashaei, C. Bayram, and M. Razeghi, Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature, Journal of Applied Physics 107, 083505 (2010).
• C. Bayram, Z. Vashaei, and M. Razeghi, AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition, Applied Physics Letters 96, 042103 (2010).
• C. Bayram, N. Pere-laperne, and M. Razeghi, Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition, Applied Physics Letters 95, 201906 (2009).
• N. Pere-laperne, C. Bayram, L. Nguyen-The, R. McClintock, and M. Razeghi, Tunability of Intersubband absorption from 4.5 to 5.3 µm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition, Applied Physics Letters 95, 131109 (2009).
• C. Bayram and M. Razeghi, ULTRAVIOLET DETECTORS: Nitrides push performance of UV photodiodes, Laser Focus World 45(9), p. 47-51 (2009).
• J. L. Pau, R. McClintock, K. Minder, C. Bayram, P. Kung, M. Razeghi, E. Munoz, and D. Silversmith, Gieger-mode operation of back-illuminated GaN avalanche photodiodes, Applied Physics Letters 91, 041104 (2007).
• C. Bayram, D. Rogers, F. H. Teherani, and M. Razeghi, Fabrication and Characterization of Novel Hybrid Green LEDs Based on Substituting n-type ZnO for n-type GaN in an Inverted p-n Junction, Journal of Vacuum Science and Technology B 27, 1784 (2009).
• V. E. Sandana, D. J. Rogers, F. H. Teherani, R. McClintock, C.Bayram, M. Razeghi, H.-J. Drouhin, M.C. Clochard, V. Sallet, G. Garry, and F. Falyouni, Comparison of ZnO Nanostructures Grown Using pulsed layer deposition, metalorganic chemical vapor deposition, and physical vapor transport, Journal of Vacuum Science and Technology B 27, 1678 (2009).
• C. Bayram, N. Pere-laperne, R. McClintock, B. Fain and M. Razeghi, Pulsed Metalorganic Chemical Vapor Deposition of High Quality AlN/GaN Superlattices for Near-Infrared Intersubband Transitions," Applied Physics Letters 94, 121902 (2009).
• C. Bayram and M. Razeghi, Stranski-Krastanov growth of InGaN quantum dots emitting in green spectra, Applied Physics A: Materials Science & Processing 96, 403 (2009).
• C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi, Comprehensive study of blue and green multi-quantum-well light emitting diodes grown on conventional and lateral epitaxial overgrowth GaN, Applied Physics B: Lasers and Optics 95, 307 (2009).
• J. L. Pau, C. Bayram, P. Giedraitis, R. McClintock, and M. Razeghi, GaN nanostructured p-i-n photodiodes, Applied Physics Letters 93, 221104 (2008).
• C. Bayram, J. L. Pau, R. McClintock, M. Razeghi, M. P. Ulmer, and D. Silversmith, High Quantum Efficiency Back-illuminated GaN Avalanche Photodiodes, Applied Physics Letters 93, 211107 (2008).
• C. Bayram, F. H. Teherani, D. Rogers, and M. Razeghi, A hybrid green light- emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum wells/p-GaN, Applied Physics Letters 93, 081111 (2008).
• C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi, Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type delta- doping, Applied Physics Letters 92, 241103 (2008).
• C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi, Delta-doping optimization for high quality p-type GaN, Journal of Applied Physics 104, 083512 (2008).
• J. L. Pau, C. Bayram, R. McClintock, D. Silversmith, and M. Razeghi, Back- illuminated separate absorption and multiplication GaN avalanche photodiodes, Applied Physics Letters 92, 101120 (2008).
• J. L. Pau, R. McClintock, C. Bayram, K. Minder, D. Silversmith, and M. Razeghi, High Optical Response in Forward Biased (In,Ga)N-GaN Multi-Quantum-Well Diodes under Barrier Illumination, IEEE Journal of Quantum Electronics 44, 346 (2008).
• K. Minder, J. L. Pau, R. McClintock, P. Kung, C. Bayram, M. Razeghi, and D. Silversmith, Scaling in GaN avalanche photodiodes designed for back- illumination, Applied Physics Letters 91, 073513 (2007).
• R. McClintock, J. L. Pau, K. Minder, C. Bayram, P. Kung, and M. Razeghi, Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes, Applied Physics Letters 90, 141112 (2007).

Invited Lectures

• Atomic Engineering of Gallium Nitride Semiconductors for Ultraviolet-to-Terahertz Photonics
• LIGHTing and NETworking (LIGHTNET) through Advanced Solid State Lighting
• AlXGa(1-X)N-based intersubband devices
• Vertical thinking in light emitting diodes
• Novel cubic phase III-nitride complementary metal-oxide-semiconductor transistor technology
• Next Generation Gallium Nitride Microelectronics & Photonics
• Vertical thinking in light emitting diodes
• Next Generation Gallium Nitride Microelectronics & Photonics
• Investigating Thermal Properties of Vertically-Integrated GaN Heterostructures
• InGaN-based flexible light emitting diodes
• Polarization-free integrated gallium-nitride photonics
• GaN Devices Gearing up for the 21st Century
• Vertical Thinking in Light Emitting Diodes
• GaN Devices Gearing up for the 21st Century
• Vertical Thinking in Light Emitting Diodes
• Vertical Thinking in Light Emitting Diodes
• Light Emitting Diode Gearing up for the 21st Century
• Vertical thinking in blue light emitting diodes: GaN-on-graphene technology
• Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100)
• Vertical thinking in light emitting diodes
• Gallium nitride compound semiconductors for ultraviolet, visible, and terahertz photonics
• LED Lighting

Patents

• C. Bayram, R. Grady, and K. Park. Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layer. U.S. Patent 10,211,328, issued February 19, 2019.
• C. Bayram and R. Liu. Maximizing cubic phase group III-nitride on patterned silicon. U.S. Patent 10,027,086, issued July 17, 2018.

Magazine Articles

• C. Bayram. The power for change: van der Waals Epitaxy. Compound Semiconductor Magazine 24 (3), 52 (April/May 2018).
• C. Bayram. Green LEDs: The case for cubic GaN. Compound Semiconductor Magazine 22 (8), 27 (Dec. 2016).

Journal Editorships

• Associate Editor, IEEE Nanotechnology Magazine, 2019 - onwards
• Editor, IEEE Transactions on Electron Devices, 2019 - 2021
• Editorial Board Member, Journal of Physics: Photonics, 2019 - onwards

Professional Societies

• Technical Committee Chair, 01/01/2020 to 12/31/2021, IEEE EDS Optoelectronic Devices
• Member 2008-present Materials Research Society (MRS)
• Senior Member 2013-present SPIE Society (member since 2006)
• Senior Member 2016-present IEEE Society (member since 2005)
• Senior Member 2016-present IEEE Photonics Society (member since 2007)
• Senior Member 2016-present IEEE Electron Devices Society (member since 2009)
• Senior Member 2018-present Optical Society of America (OSA) (member since 2005)

Teaching Honors

• Faculty Advisor, Lemelson-MIT Student Prize Graduate Finalist Mr. Richard Liu (2020)
• List of Teachers Ranked as Excellent by Their Students, ECE 498/443, Spring (2018)
• Collins Scholar (2015)

Research Honors

• FRONT COVER - "Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory" - in the ACS Omega journal (2020)
• National Inventors Hall of Fame Collegiate Inventors Competition Finalist (Team: Cubic LEDs, Graduate Student: Mr. Richard Liu, Advisor: Prof. Can Bayram) (2019)
• Invitation to the China-America Frontiers of Engineering Symposium (CAFOE), hosted by Qualcomm and organized by the National Academy of Engineering (NAE) and Chinese Academy of Engineering (CAE) (2019)
• International Union of Pure and Applied Physics (IUPAP) Young Scientist Prize in Optics (2018)
• IEEE Nanotechnology Council Early Career Award (2018)
• Dean's Award for Excellence in Research for Assistant Professor (2018)
• Turkish American Scientists & Scholars Association Young Scholar Award (2018)
• OSA Society Senior Membership (2018)
• NSF CAREER Award (2017)
• Compound Semiconductor Manufacturing Technology (CS MANTECH) Best Student Paper Award (Mr. Richard Liu) (2017)
• AFOSR Young Investigator Award (2016)
• IEEE Society Senior Membership (2016)
• IEEE Electron Devices Society Early Career Award (2014)
• FRONTISPIECE COVER - "Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy" - in the Advanced Functional Materials journal (2014)
• SPIE Society Senior Membership (2013)
• IBM Invention Achievement Awards (2013, 2013, 2014)
• INSIDE COVER - "Ultra-Light High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic" - in the Advanced Energy Materials journal (2013)
• Best Paper Award at Infrared Optoelectronics Materials and Devices Conference, MIOMD-XI (2012)
• IBM Ph.D. Fellowship (2010)
• Link Foundation Energy Fellowship (2010)
• IEEE Electron Devices Society PhD Fellowship (2010)
• Boeing Engineering Student of the Year (2009)
• IEEE Photonics Society Graduate Student Fellowship (2009)
• SPIE Laser Technology, Engineering and Applications Scholarship (2009)
• Ludo Frevel Crystallography Scholarship (2009)
• Dow Sustainability Innovation Award (2008)
• IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society Travel Award (2005)

Public Service Honors

• SPIE Community Champion (2019)
• Docent (Associate Professor) title in Electrical Engineering from the Turkish Council of Higher Education (2014)

Courses Taught

• BIOE 497 - Individual Study
• ECE 110 - Introduction to Electronics
• ECE 340 - Semiconductor Electronics
• ECE 443 - LEDs and Solar Cells
• ECE 498 - LEDs and Solar Cells