ECE 585
ECE 585 - MOS Device Modeling & Design
Spring 2024
| Title | Rubric | Section | CRN | Type | Hours | Times | Days | Location | Instructor |
|---|---|---|---|---|---|---|---|---|---|
| MOS Device Modeling & Design | ECE585 | D | 34009 | LEC | 4 | 0930 - 1050 | T R | 2013 Electrical & Computer Eng Bldg | Elyse Rosenbaum |
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Official Description
Techniques for characterizing gate oxide and interface properties and reliability, I-V models for circuit simulation, design for control of short channel effects, silicon-on-insulator, and new device structures. Course Information: Prerequisite: ECE 441.
Subject Area
- Integrated Circuits and Systems
Course Director
Description
I-V models for circuit simulation; design for control of short channel effects; new device structures; measurement techniques; emphasis on deep submicron technology.
Goals
To familiarize students with the behavior of deep sub-micron (DSM) CMOS devices, including an understanding of how to design the device to obtain the desired characteristcs, experimental techniques for characterization, and mathematical models to represent the device in a circuit simulation environment.
Topics
- Characterization of MOS Capacitors: C-V and charge pumping measurements, gate current modeling
- MOSFET I-V Model
- Short Channel Effects
- Drain and Channel Engineering, includes hot carrier effects latch-up and breakdown
- Silicon-on-Insulator MOSFET
- MOSFET Model for Transient Simulation
- New device structures and materials
Detailed Description and Outline
To familiarize students with the behavior of deep sub-micron (DSM) CMOS devices, including an understanding of how to design the device to obtain the desired characteristcs, experimental techniques for characterization, and mathematical models to represent the device in a circuit simulation environment.
Topics:
- Characterization of MOS Capacitors: C-V and charge pumping measurements, gate current modeling
- MOSFET I-V Model
- Short Channel Effects
- Drain and Channel Engineering, includes hot carrier effects latch-up and breakdown
- Silicon-on-Insulator MOSFET
- MOSFET Model for Transient Simulation
- New device structures and materials
Texts
Yuan Taur and Tak Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press, 1998.
Recommended Texts:
E. H. Nicollian and J.R. Brews, MOS(Metal Oxide Semiconductor) Physics and Technology.
J.P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI, 2nd edition.
Y. Tsividis, Operations and Modeling of the MOS Transistor, 2nd edition
Recommended Texts:
E. H. Nicollian and J.R. Brews, MOS(Metal Oxide Semiconductor) Physics and Technology.
J.P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI, 2nd edition.
Y. Tsividis, Operations and Modeling of the MOS Transistor, 2nd edition
Last updated
2/13/2013